Noncontact electrical characterization of low-resistivity P-type 2nSe:N grown by molecular beam epitaxy
نویسندگان
چکیده
The resistivity of p-type ZnSe:N/GaAs heteroepitaxial layers grown by molecular beam epitaxy using a nitrogen free-radical source has been determined as a funct:ion of both substrate temperature and the Zn-to-Se beam equivalent pressure (BEP) ratio employed during growth, Layer resistivities were determined using a noncontact inductive-coupling radiofrequency measurement technique that provided sheet conductivity data from which layer resistivities were calculated. A minimum resistivity of 0.75 Sz cm has been measured to date for p-type ZnSe:N material grown at 235 “C with a BEP ratio of 1:2. Such a resistivity would imply a free-hole density in the range 4x lo’?-8 X 1017 cm ’ assuming the hole mobility to be in the range 20-10 cm2 V ’ s *, respectively.
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